Our offer

From design and frontend to backend and system integration

We offer you 300 mm CMOS process and device development with front-end integration as well as 300 mm heterogeneous wafer-level system integration.


  • Atomic Layer Deposition (ALD)
  • Nanopatterning / E-Beam Lithography
  • Chemical Mechanical Polishing (CMP)
  • Wafer Metallization
  • Wafer Cleaning
  • Wafer Services
  • 2.5/3D Technologies
  • High Density Redistribution
  • Wafer bumping
  • Wafer bonding
  • Thinning/Singulation/Dicing
  • High-Density Assembly
  • Failure Analysis & Reliability Investigation
  • Sensor Development
  • Photonic & Plasmonic Systems



  • 3D wafer-level system-in-package WL SiP, CSP
  • Application-specific Cu-TSV integration: via middle, via last, backside TSV
  • Si-interposer with TSV, multi-layer RDL, micro-cavities and integrated passives
  • Glass interposer w/wo TGV, multi-layer RDL and µ-interconnects
  • High-density, multi-pitch and size micro-bump or pillar interconnect formation
  • Temporary and permanent wafer bonding (adhesive, soldering, direct)
  • Hybrid Bonding, Direct bond interconnects (DBI) – W2W, D2
  • BEoL Cu-interconnects compatible to 28/22 FDX technology nodes



  • Integration of
    • Non-volatile memories: STT-/SOT-MRAM / Racetrack, RRAM, FeFet, FRAM
    • Spin-based and superconducting qubits
    • Micromagnets and superconducting wiring
    • High-capacitance capacitors and resistor networks
    • Integrable sensor systems (thermopiles, IR detectors)


How we can support you

Feasibility Studies



Process Validation & Transfer